Prof. Y. Uraoka and Assoc. Prof. Y. Ishikawa
Laboratory of the Information Device Science,Graduate School of Materials Science

World's First Demonstration of Oxide Semiconductor Switch Fabricated by Solution Process: Twice as Fast Operation was Achieved through Low Temperature Annealing, which will Contribute to the Realization of Flexible Displays.

For next generation devices such as smart phones or tablet computers, high performance thin film transistors are indispensable. InGaZnO (A Compound semiconductor consisting of In, Ga, and Zn: also called IGZO) film is regarded as a promising material for transistor production. Prof. Y. Uraoka and Assoc. Prof. Y. Ishikawa of the Information Device Science Laboratory, Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST, President: N. Ogasawara) succeeded in the fabrication of IGZO TFT's through a solution process at the low temperature of 300℃ for the first time. They were able to demonstrate operation twice as fast as TFTs fabricated at 500℃ by conventional vacuum processes. This technique will enable fabrication of displays on flexible substrates. Their research results will be presented at the IEEE/AMFPD International Conference.